Krishna Shenai

Krishna Shenai

Principal Electrical Engineer
- Energy Systems

Krishna Shenai is a Principal Electrical Engineer within the Energy Systems Division at Argonne. He is conducting pioneering research on wide bandgap power semiconductor materials, devices and applications and is leading the effort to develop and commercialize wide bandgap semiconductor materials and devices for power electronics switching, power amplifier and sensor applications. These new semiconductor devices are expected to transform next-generation transportation, communication and electricity grid infrastructures, as well as lighting and the use of renewable energy.

For nearly 30 years, Shenai has pioneered and made seminal contributions to the development and manufacturing of power semiconductor materials and devices, power converters and power amplifiers. His research has produced foundation technologies and set industry standards for several multi-billion dollar commercial products including discrete power metal–oxide–semiconductor field-effect transistors (MOSFETs), power supplies, power amplifiers for wireless and cellular communication, silicon carbide power devices and low-voltage microprocessors.

Shenai's prior experience includes working for COMSAT Labs, General Electric Corporate R&D Center, Intel Corporation, University of Wisconsin-Madison, University of Illinois-Chicago, Utah State University and the University of Toledo. He has supervised theses dissertations of over three dozen graduate students who are making important contributions worldwide in these fields.

Shenai has authored or co-authored more than 350 peer-reviewed papers and 10 book chapters, he has edited six books, and holds 13 U.S. patents.

Awards, Honors & Memberships

  • Fellow, Institute of Electrical and Electronics Engineers (IEEE)
  • Fellow, American Physical Society (APS)
  • Fellow, American Association for the Advancement of Science (AAAS)
  • Fellow, Institute of Electrical and Telecommunication Engineers, India (IETE)
  • Member, Serbian Academy of Engineering
  • University Scholar, University of Illinois
  • Distinguished Lecturer, IEEE Electron Devices Society
  • Member, IEEE EDS Technical Committee on Power Semiconductor Devices
  • Member, IEEE EDS Technical Committee on Semiconductor Manufacturing
  • Editor, IEEE J. Electron Device Society
  • Regional Editor, Int. J. Circuits, Systems and Computers (JCSC) (2007-2011)
  • Elected Member, IEEE Electron Devices Society Administrative Society (1998-2003)
  • Founding Chairman, IEEE EDS/MTT/LEOS Chapter, Oregon Section(1991-1994)
  • General Chairman, IEEE Bipolar/BiCMOS Circuits and Technologies (BCTM), Minneapolis, MN, October 1996
  • Editor-in-Chief (EIC), IEEE Electron Devices Society Newsletter (1994-2002)
  • Founder and Chairman, First IEEE Int. Conf. Emerging Optoelectronic Technologies (CEOT), Bangalore, India, December 1991
  • Editor, IEEE Trans. Electron Devices (1990-2000)
  • Invited guest editor, Special Issue of IEEE Trans. Electron Devices and two Special Issues of IEEE J. Solid-State Circuits
  • Associate Editor, IEEE Trans. Power Electronics special issue on “Wide Bandgap Semiconductor Power Electronics”
  • Co-guest editor, ECS J. Solid-State Science and Technology special issue on “Wide Bandgap Power Semiconductors”
  • Co-guest editor of IEEE Trans. Electron Devices special issue on “Wide Bandgap Power Devices for Energy Efficiency and Renewable Energy Utilization”
  • Co-guest editor of IEEE Trans. Semiconductor Manufacturing special issue on “Manufacturing Challenges in Wide Bandgap Semiconductors”

Publications & Patents

  • K. Shenai, N. Jack, U.S. Patent 7,831,205 B2, “Methods and systems for wireless communication by magnetic induction”
  • K. Shenai, U.S. Patent 6,844,251, “Method of forming a semiconductor device with a junction termination layer”
  • K. Shenai,  M. Trivedi, U.S. Patent 5,914,513, “Electronically tunable capacitor”
  • K. Shenai, Editor, VLSI Metallization Technologies, Artech House, Norwood, MA, 1990.
  • A. Selvarajan, K. Shenai, and V. K. Tripathi, Eds., Optoelectronics: Technologies and Applications, SPIE Press, Bellingham, WA, 1993.
  • K. Shenai, M. Bakowski, M. Dudley, R. Garg, N. Ohtani, Eds. Gallium Nitride and Silicon Carbide Power Technologies 2, Electrochemical Society Transactions, October 2012.
  • K. Shenai, S. J. Eglash, R. W. Dutton, M. Zurakowski, W. E. Spicer, "Field-Enhanced Tunneling and Barrier Lowering in Al-nGaAs-nGaAs Schottky Contacts Grown by MBE," IEEE Electron Device Lett., vol. 5, no. 8, pp. 329-332, August 1984.
  • K. Shenai, E. Sangiorgi, R. M. Swanson, K. C. Saraswat, R. W. Dutton, "Modeling and Characterization of Dopant Redistributions in Metal and Silicide Contacts," IEEE Trans. Electron Devices, vol. 32, no. 4, pp. 793-799, April 1985.
  • S. J. Eglash, N. Newman, S. Pan, D. Mo, K. Shenai, W. E. Spicer, F. A. Ponce, D. M. Collins, "Engineered Schottky Barrier Diodes for the Modification and Control of Schottky Barrier Heights," J. Appl. Phys., vol. 61, pp. 5159-5169, June 1987.
  • K. Shenai, "Very Low Resistance Non-Alloyed Ohmic Contacts to Sn-Doped Molecular Beam Epitaxial GaAs," IEEE Trans .Electron Devices, vol. 34, no. 8, pp. 1642-1649, August 1987.
  • K. Shenai, R. W. Dutton, "Current Transport Mechanisms in Atomically Abrupt Metal-Semiconductor Interfaces," IEEE Trans. Electron Devices, vol. 35, no. 4, pp. 468-482, April 1988.
  • K. Shenai, R. W. Dutton, "Low-Field Electron Transport Mechanisms in GaAs MESFETs," IEEE Trans. Electron Devices, vol. 35, no. 5, pp. 578-589, May 1988.
  • K. Shenai and R.W. Dutton, "Channel-Buffer (Substrate) Interface Phenomena in GaAs MOSFETs Fabricated by MBE," IEEE Trans. Electron Devices, vol. 35, no. 5, pp. 590-603, May 1988.
  • K. Shenai, R. S. Scott, B. J. Baliga, "Optimum Semiconductors for High-Power Electronics," IEEE Trans. Electron Devices, vol. 36, no. 9, pp. 1811-1823, September 1989.
  • K. Shenai, "Optimally Scaled Low-Voltage Vertical Power DMOSFETs for High-Frequency Power Switching Applications," IEEE Trans. Electron Devices, vol. 37, no. 4, pp. 1141-1153, April 1990.
  • K. Shenai, "Novel Refractory Contact and Interconnect Metallizations for High-Voltage and Smart-Power™ Applications," IEEE Trans. Electron Devices, vol. 37, no. 10, pp.2207-2221, October 1990.
  • K. Shenai, "Potential Impact of Emerging Semiconductor Technologies on Advanced Power Electronic Systems," IEEE Electron Device Lett., vol. 11, no. 11, pp. 520-522, November 1990.
  • K. Shenai, "Manufacturability Issues Related to Transient Thermal Annealing of Titanium Films in a Rapid Thermal Processor," IEEE Trans. Semiconductor Manufacturing, vol. 4, no. 1, pp. 1-8, February 1991.
  • K. Shenai, "A Circuit Simulation Model for High-Frequency Power MOSFETs," IEEE Trans. Power Electronics, vol.6, no. 3, pp. 539-547, July 1991.
  • K. Shenai, "Optimized Trench MOSFET Technologies for Power Devices," IEEE Trans. Electron Devices, vol. 39, no. 6, pp. 1435-1443, June 1992.
  • S. Pendharkar, K. Shenai, "Optimization of the Anti-Parallel Diode in an IGBT Power Module," IEEE Trans. Electron Devices, vol. 44, no. 5, pp. 879-886, May 1997.
  • M. Trivedi, K. Shenai, "Failure Mechanisms of IGBTs Under Short Circuit and Clamped Inductive Switching Stress," IEEE Trans. Power Electronics, vol. 14, no. 1, pp. 108-116, January 1999.
  • M. Trivedi, K. Shenai, "Performance Evaluation of High-Power Wide Band-Gap Semiconductor Rectifiers," J. Appl. Physics, vol. 85, no. 9, pp. 6889-6897, May 1999.
  • K. Shenai, "Made-to-order Power Electronics," IEEE Spectrum, vol. 37, No. 7, pp. 50-55, July 2000 (invited paper).
  • K. Shenai, “Switching MegaWatts with Power Transistors,” Interface Magazine, The Electrochemical Society, Pennington, NJ (invited paper) – to be published in Spring 2013.