Stephen Streiffer is the Interim Associate Laboratory Director for Photon Sciences at Argonne.
The Photon Sciences directorate consists of the X-ray Science, Accelerator Systems and Advanced Photon Source Engineering Support divisions, which comprise the Advanced Photon Source (APS); and the Argonne Accelerator Institute.
The APS is the brightest source of high-energy X-rays in the Western Hemisphere and is used to study the structures of materials and processes at the atomic scale. It is also the largest scientific user facility in the North America, with more than 3,500 users visiting each year.
He has also served as interim director of Argonne’s Center for Nanoscale Materials, a national user facility that provides capabilities explicitly tailored to the creation and characterization of new functional materials on the nanoscale. The center’s portfolio includes research on electronic and magnetic materials and devices, nanobio interfaces, nanofabrication, nanophotonics, theory and modeling, and X-ray microscopy.
Dr. Streiffer’s scientific expertise is in nanostructured complex oxides and in structural characterization of materials particularly using transmission electron microscopy and X-ray scattering techniques.
Overarching themes in his research program include the development of novel concepts for integration of oxide heterostructures, establishing a fundamental understanding of polar interfaces, and exploring how these interfaces may be manipulated to influence electronic and chemical function.
His active research projects focus on utilizing in-situ synchrotron X-ray methods to probe chemical vapor deposition of complex oxides as well as phase transformations and nanoscale size effects in ferroic thin films. He is also currently involved in in-situ synchrotron X-ray studies of the synthesis of InGaN heterostructures as part of an effort to expand the basic understanding of materials for energy-efficient solid state lighting. He has authored or co-authored more than 150 scientific publications and holds one patent.