Upcoming Events

Applications of Ab-initio Modeling in the Resistive Random Access Memory Technology

September 12, 2013 11:00AM to 12:00PM
Presenter 
Liang Zhao, Stanford University
Location 
Building 241
Type 
Seminar
Series 
NST Nanoscience Seminar
The seminar will take place in Building 241, Room A323.

Abstract:
Resistive random access memory (ReRAM) is one of the most promising candidates for future non-volatile memory technology. But the understanding of resistive switching mechanisms in transition metal oxide remains a challenge due to the microscopic and dynamic nature.

In this talk, I will explore the ab-initio modeling techniques for the resistive switching materials. The capabilities to explain physical phenomena and predict device characteristics are demonstrated using three examples.