Applications of Ab-initio Modeling in the Resistive Random Access Memory Technology
Resistive random access memory (ReRAM) is one of the most promising candidates for future non-volatile memory technology. But the understanding of resistive switching mechanisms in transition metal oxide remains a challenge due to the microscopic and dynamic nature.
In this talk, I will explore the ab-initio modeling techniques for the resistive switching materials. The capabilities to explain physical phenomena and predict device characteristics are demonstrated using three examples.