Carbon Electronics from Lab to Fab
It is now widely appreciated that electronic devices based on carbon nanotubes (CNTs) and graphene have the potential to outperform conventional silicon devices. As the challenges associated with scaling silicon technology mount, carbon is being seriously considered as an alternative, or successor, to silicon. However, in order to create a viable carbon technology, daunting and unique integration challenges must be overcome. For CNTs, these include isolation of semiconducting CNTs, selective placement of CNTs from solution, and passivation.
For graphene, material uniformity, dielectric growth, and wafer-scale transfer are key issues. In this talk I will describe recent progress, made at IBM and elsewhere, on solving these challenges. I will discuss the device performance requirements for a competitive CNT technology, which guides our integration strategy. Finally, I will highlight some of the unique characterization techniques used at IBM to understand graphene growth mechanisms.