Argonne National Laboratory

Upcoming Events

Combined Laue Mapping and Monochromatic Scanning for Strain Measurement and Data Interpretation

Series 
Materials Science Seminar
Presenter 
Xi Lu, Georgia Institute of Technology
November 22, 2013 11:00AM to 12:00PM
Location 
Building 223, Room S105
Type 
Seminar
Abstract:
To study thermomechanical strain induced by the mismatch of coefficients of thermal expansion in through-silicon vias (TSVs) and thus provide fundamental understanding of TSV reliability, strain measurements have been performed with synchrotron x-ray diffraction (XRD). The measured strains are available as two-dimensional (2D) distribution maps, whereas the strain distributions in TSVs are three-dimensional (3D) in nature. To understand this 3D to 2D data projection process, a data interpretation method based on beam intensity averaging is proposed and validated with measurements. The proposed method is applicable to XRD strain measurements on thin as well as thick samples.