Argonne National Laboratory

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Structural and Chemical Manipulation of 2D Nanomaterials: Graphene, MoS2, Boron Nitride

NST Nanoscience Colloquium
Vikas Berry, University of Illinois at Chicago
April 6, 2016 4:00PM to 5:00PM
Building 440, Room A105-106

Abstract: The presentation with have three parts: (a) wrinkling of two-dimensional nanomaterials, (b) oxide-assisted growth of BN, and (c) MoS2 functionalization for electronic applications.

A graphene flap-valve will be demonstrated that allows only one-way expulsion of an interfaced biological cell's aqueous content to "indefinitely desiccate" and shrink cells even under high humidity. We apply this process to form axially aligned graphene wrinkles to develop a device with anisotropic electrical properties.

Ultrasmooth hexagonal boron nitride (h-BN) can dramatically enhance the carrier/phonon transport of interfaced two-dimensional nanomaterials. Boron-oxygen and boron-nitrogen chemistries for oxide- and nitride-assisted nucleation and growth of large-area, uniform, and ultrathin h-BN directly on oxidized substrates will be outlined.

Ultrathin two-dimensional metal dichalogenide (MoS2, WS2, and so forth) exhibits confinement of carriers, evolution of band structure, high on/off rectification, and high thermal absorption. However, their incorporation into other systems requires controlled functionalization and/or interaction with other nanoscale entities. Stable sulfur/nobel metal functionalization via both diffusion limited aggregation and instantaneous reaction arresting (using microwaves) on MoS2 crystallographic edges (with 60-deg displacement) will be presented.