Sheng Tong

Postdoctoral Associate

My research focuses primarily on dielectric, piezoelectric, and ferroelectric materials and devices for electric energy storage, energy harvest, memory, and microelectromechanical systems. My interests are also in the electronic, ferroelectic, and magnetic properties of complex oxide and nanoscale structures and scanning probe microscopy characterization. My recent studies have focused on free-standing ferroelectric membrane fabrication for energy harvest application, and ultrathin ferroelectric thin films for memristor application.

Professional Education

  • PhD, University of Cincinnati, Materials Science
  • MS, South China University of Technology, Microelectronic Engineering
  • BS, South China University of Technology, Electrical Engineering

Publications

  1. S. Tong, B. Ma, M. Narayanan, et al., “Dielectric behavior of lead lanthanum zirconate titanate thin films deposited on different electrodes/substrates,” Mater. Lett. DOI: 10.1016/j.matlet.2013.05.068
  2. S. Tong, M. Narayanan, B. Ma, et al., “Effect of Lanthanum Content and Substrate Strain on Structural and Electrical Properties of PLZT Thin Films,” Mater. Chem. Phys. DOI: 10.1016/j.matchemphys.2013.03.067
  3. S. Tong, B. Ma, M. Narayanan, et al., “PLZT Ceramic Thin Films for Energy Storage,” ACS Appl. Mater. Inter., 5, 1474 (2013)
  4. S. Tong, M. Narayanan, B. Ma, et al., “Effect of dead layer and strain on the diffuse phase transition of PLZT relaxor thin films,” Act. Mater., 59, 1309 (2011).

Projects