Applications of Ab-initio Modeling in the Resistive Random Access Memory Technology
The seminar will take place in Building 241, Room A323.

Resistive random access memory (ReRAM) is one of the most promising candidates for future non-volatile memory technology. But the understanding of resistive switching mechanisms in transition metal oxide remains a challenge due to the microscopic and dynamic nature.

Center for Nanoscale Materials Fact Sheet

The Center for Nanoscale Materials at Argonne National Laboratory is a premier user facility providing expertise, instruments, and infrastructure for interdisciplinary nanoscience and nanotechnology research. Academic, industrial, and international researchers can access the center through its user program for both nonproprietary and proprietary research.

Few-Layer Graphene as a Dry Lubricant

Two- to three-layer graphene reduces friction and wear between contact and sliding surfaces fourfold.

Publishing at Nature Photonics
David received a PhD in physics (on diffraction theory) from Queensland University of Technology in 2003 (under Dr Dimitri Gramotnev) and then was a JSPS postdoctoral research fellow in the University of Tokushima under Prof.
From Pinwheels to Quasicrystals: Investigations of C60 and Pentacene via Scanning Tunneling Microscopy
C60 and pentacene are archetypal molecules for the study of adsorption at surfaces due to their simple structures. Due to their strong optical absorption and complementary organic semiconductor properties, they are also used in the active layers of bulk heterojunction solar cells.