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Publication

Incorporation of Al or Hf in Atomic Layer Deposition TiO2 for Ternary Dielectric Gate Insulation of InAlN/GaN and AlGaN/GaN MISH Structure

Authors

Colon, Albert; Stan, Liliana; Divan, Ralu ; Shi, Junxia

Division

NST

Publication Year

2017

Publication Type

Article

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