@article{ title = { Incorporation of Al or Hf in Atomic Layer Deposition TiO2 for Ternary Dielectric Gate Insulation of InAlN/GaN and AlGaN/GaN MISH Structure}, author = {Colon, Albert and Stan, Liliana and Divan, Ralu and Shi, Junxia}, journal = {Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films}, year = {2017}, volume = {35}, number = {1}, pages = { - , 01B132}, month = {Jan}, note = {10.1116/1.4972252} }