A unique diamond nanofeather structure, distinct from conventional ultra- and nanocrystalline diamond (UNCD and NCD) structures, offers ease of fabrication, a high density of nanopores, and a 300-fold increase in capacitance.
Significance and Impact
The electrochemical etching method employed may offer a low-cost alternative to traditional diamond nano–structure fabrication techniques, eliminating masks and templates, and resulting in high performance materials.
- We fabricated and analyzed samples produced from NCDs grown on boron doped Si wafers, both etched and unetched, and compared a series of DNF samples with varied etch times.
- This work used Raman spectroscopy and high resolution SEM resources at the Center for Nanoscale Materials.
Work was performed in part at the Center for Nanoscale Materials.
About Argonne’s Center for Nanoscale Materials
The Center for Nanoscale Materials is one of the five DOE Nanoscale Science Research Centers, premier national user facilities for interdisciplinary research at the nanoscale supported by the DOE Office of Science. Together the NSRCs comprise a suite of complementary facilities that provide researchers with state-of-the-art capabilities to fabricate, process, characterize and model nanoscale materials, and constitute the largest infrastructure investment of the National Nanotechnology Initiative. The NSRCs are located at DOE’s Argonne, Brookhaven, Lawrence Berkeley, Oak Ridge, Sandia and Los Alamos National Laboratories. For more information about the DOE NSRCs, please visit https://science.osti.gov/User-Facilities/User-Facilities-at-a-Glance.
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