Nitrogen-incorporated ultrananocrystalline diamond [N-UNCD] based photocathodes demonstrated high quantum efficiency (QE=4.2 x10-4), comparable intrinsic emittance (1.00 µm/mm), and durability (year-long atmospheric exposure) at moderate vacuum (10-9 torr).
Significance and Impact
The demonstrated qualities together with high QE at UV wavelengths make N-UNCD a promising candidate for high brightness photoinjector applications.
The incorporation of nitrogen at the grain boundary introduces sp2 rich graphitic carbon localized in between the sub-nm-scale (<10 nm) diamond grains enabling high electron emission
Center for Nanoscale Materials (CNM) resources included a CVD-diamond system, electron microscopy and Raman spectroscopy
Work was performed in part at CNM.
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