Ultrafast (t < 200 fs) hot-hole injection from gold nanoparticles into the valence band of p-type GaN alters the thermalization dynamics of hot electrons, reducing peak electronic temperature and electron–phonon coupling time of the gold nanoparticles.
Significance and Impact
Understanding of hot-carrier dynamics in photo-excited metal nanostructures is needed to unlock their potential for photodetection and photocatalysis. These results advance our understanding of hot-hole dynamics in metal–semiconductor heterostructures.
- Center for Nanoscale Materials (CNM) ultrafast transient absorption capabilities were utilized. First-principles calculations reveal hot-hole injection modifies the relaxation dynamics by modulating the electronic structure of the metal.
Work was performed in part at CNM.
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