In covalently doped single-walled carbon nanotubes (SWCNTs), ultrafast trapping of excitons at defect sites outpaces exciton diffusion, producing localization of excitons and a brighter single photon source.
Significance and Impact
These findings reveal critical information for the design of bright near-infrared emitters that can be utilized in biological, quantum information, and nanophotonic applications.
- Conducted ultrafast pump-probe and Raman studies at the Center for Nanoscale Materials (CNM).
- Simulated the carrier dynamics of the system and fit the data to a kinetic model, revealing an upper limit in quantum defect density for obtaining highly luminescent SWCNTs without causing irreversible damage.
Work was performed, in part, at CNM.
About Argonne’s Center for Nanoscale Materials
The Center for Nanoscale Materials is one of the five DOE Nanoscale Science Research Centers, premier national user facilities for interdisciplinary research at the nanoscale supported by the DOE Office of Science. Together the NSRCs comprise a suite of complementary facilities that provide researchers with state-of-the-art capabilities to fabricate, process, characterize and model nanoscale materials, and constitute the largest infrastructure investment of the National Nanotechnology Initiative. The NSRCs are located at DOE’s Argonne, Brookhaven, Lawrence Berkeley, Oak Ridge, Sandia and Los Alamos National Laboratories. For more information about the DOE NSRCs, please visit https://science.osti.gov/User-Facilities/User-Facilities-at-a-Glance.
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