Abstract: Optically addressable point defects in wide band gap semiconductors are a versatile platform for quantum information science (QIS). Such qubits are intrinsically sensitive to their local crystalline, charge, and nuclear environments. These variations directly affect the coherence, charge stability, and the optical transition frequency of the defects, limiting their use as scalable platforms for nanoscale sensing and quantum communication. Interestingly, with recent advances in host growth, nanofabrication, and defect synthesis, these environments can be engineered via control of crystal structure, isotopic purity, and host dimensionality. Herein, we will present work on the optimization of these defect systems via isotopically controlled synthesis and localization of various defect systems in silicon carbine and diamond.
Some emphasis will be placed on exploring how advanced, synchrotron based characterization techniques provide a direct means to better understand the local crystal environment surrounding the defects and offers a pathway for improving the defect based quantum technologies. Finally, some discussion about how to best use these defects for materials science applications will be presented.