Abstract: Transition metal dichalcogenides (TMDs) have attracted attention as potential building blocks for various electronic applications due to their atomically thin nature. Innovation in storage applications is intimately connected with the development of modern information technology. Denser, faster memories that consume less power are highly sought after.
Resistive random access memory (RRAM) is promising as an emerging technology because of its potential scalability, high operation speed, high endurance, and ease of process flow. However, reliable and repeatable operation is a challenge in applications since switching involves the uncontrollable motion of individual atoms.
In this talk, I will discuss the first experimental demonstration of a vertical MoTe2-based bipolar RRAM device that exhibits a new switching mechanism: a structural transition from the stable semiconducting 2H phase to a more conductive 2Hd state, which is induced by an electric field. Set and reset voltages are tuned by the MoTe2 flake thickness and a switching speed of 5 ns switching is achieved. This new switch mechanism holds promise for faster and more reproducible switching compared with conventional RRAM devices that are based on the migration of ions or the amorphous-to-crystalline transition in phase change memories.
Moreover, vertical TMD-based memory selectors show promising characteristics for future application memory applications.