We created chromium ions (Cr4+) in commercial 4H silicon-carbide and measured long spin coherence times with high readout fidelities.
Significance and Impact
We measured the optical and spin dynamics of Cr4+ defect ensembles as a promising extrinsic, optically active spin qubit in silicon carbide.
- An implantation and annealing process was demonstrated that produces high quality chromium spin defects in 4H-SiC.
- An ensemble optical hole linewidth of 31 MHz was measured, displaying an order of magnitude improvement over as-grown samples.
- The governing optical and spin rates were characterized to maximize high fidelity readout (79%).
- Coherent spin control of the ensemble was demonstrated, and long coherence times (T1 > 1 s and T2 = 81 μs at 15 K) were found.
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