Using in-situ X-ray scattering and spectroscopy, we show that large changes in electronic properties can arise due to increased flexibility of the octahedral network at high vacancy concentrations
Significance and Impact
Our in-situ X-ray results suggest a general strategy for the construction of dynamics systems and devices with an array of field-tunable properties
- Performed in-situ studies at the Advanced Photon Source on ionic liquid gating behavior in WO3 single crystal thin films
- X-ray measurements were performed simultaneously with electrical measurements, allowing direct correlation between the oxygen sublattice and the conductivity
- Performed density functional theory calculations as a function of oxygen vacancy concentration in WO3, finding the dependence of octahedral rotation angles on oxygen stoichiometry
About Argonne’s Center for Nanoscale Materials
The Center for Nanoscale Materials is one of the five DOE Nanoscale Science Research Centers, premier national user facilities for interdisciplinary research at the nanoscale supported by the DOE Office of Science. Together the NSRCs comprise a suite of complementary facilities that provide researchers with state-of-the-art capabilities to fabricate, process, characterize and model nanoscale materials, and constitute the largest infrastructure investment of the National Nanotechnology Initiative. The NSRCs are located at DOE’s Argonne, Brookhaven, Lawrence Berkeley, Oak Ridge, Sandia and Los Alamos National Laboratories. For more information about the DOE NSRCs, please visit https://science.osti.gov/User-Facilities/User-Facilities-at-a-Glance.
About the Advanced Photon Source
This research used resources of the Advanced Photon Source, a U.S. DOE Office of Science User Facility operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357.
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