Using the optical properties and charge state dynamics of point defects in silicon carbide (SiC) to sense high frequency (MHz-GHz) electric field fluctuations.
Significance and Impact
Provides a means for all-optical, high frequency electrometry with quantum defects with a measured electric field sensitivity of 41 (?/???)/√Hz.
- A simple to implement, all-optical electrometry technique based on changes in the photoluminescence due to optical charge conversion of point defects in silicon carbide using both a UV and near-IR excitation wavelengths.
- Under near-IR excitation, the defect photoluminescence becomes darker and as an electric field is applied, this change in photoluminescence (time decay) becomes faster.
- Technique is highly sensitive to electric fields and sensitive to high frequency (MHz-GHz) electric and strain fields, making it ideal for studying MEMs structures.
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