We demonstrate optical charge control and photoluminescence enhancement of defects in SiC.
Significance and Impact
Understanding the charge stability and charge conversion dynamics of common defects in SiC for quantum information processing and nanoscale sensing.
- Charge control of quantum defects provide enhanced spin-dependent readout and charge stability.
- Photoluminescence (PL) from divacancy (VV) defects increases by up to three orders of magnitude using near-ultraviolet excitation.
- Enhancement shows no degradation of the spin coherence time.
- Charge conversion remains stable for hours at cryogenic temperatures.
- Allows for spatial and persistent patterning of relative charge state populations for charge memory applications.
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