Discovery of a new electron orbital contribution to the emergence of intriguing magneto-transport phenomena.
Significance and Impact
This work provides direct evidence of a new type of orbital-induced property in CeSb and its contributions to the phenomenon of extremely large magnetoresistance. It further demonstrates the potential of utilizing orbital-flop transitions in electronic applications via spin-valve-like structures.
- Grew ultra-high quality CeSb single crystals.
- Measured magnetoresistances in a rotating magnetic field perpendicular to the current.
- Developed a phenomenological model to account for the anisotropic magnetoresistance.
- Constructed a spin-valve-like structure to demonstrate the utilization of orbital-flops.
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