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Science and Technology Partnerships and Outreach Directorate

Atomic layer deposition of quaternary chalcogenides (ANL-IN-12-049)

Method of synthesizing materials for photovoltaic applications; utilizses relatively abundant, cheap, and non-toxic elements to produces photoactive films with average internal quantum efficiency of 12%.
Intellectual Property Available to License
US Patent 8,741,386
  • Atomic layer deposition of quaternary chalcogenides (ANL-IN-12-049)

Methods and systems are provided for synthesis and deposition of chalcogenides (including Cu2ZnSnS4). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.