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Science and Technology Partnerships and Outreach Directorate

Graphene Layer Formation at Low Substrate Temperature on a Metal and Carbon Based Substrate (ANL-IN-11-055C)

A system and method for forming graphene layers on a substrate
Intellectual Property Available to License
US Patent 9,875,894; US Patent Application 15/064330 
  • Graphene Layer Formation at Low Substrate Temperature on a Metal and Carbon Based Substrate (ANL-IN-11-055C)

The system and methods include direct growth of graphene on diamond and low temperature growth of graphene using a solid carbon source.

Benefits

  • Direct growth of graphene on insulating substrate at wafer-scale 
  • Order of magnitude increase in breakdown current density reaching up to one thousand times improvement over conventional metal based interconnects