Science and Technology Partnerships and Outreach
Direct Synthesis of Reduced Graphene Oxide Films on Dielectric Substrates (ANL-IN-14-110)
A method for coating a dielectric substrate with a R-GO film includes positioning the dielectric substrate in a chamber which is purged with a first gas to adjust a pressure of the chamber to a first pressure
Intellectual Property Available to License
US Patent 10,351,429 B2
- Direct Synthesis of Reduced Graphene Oxide Films on Dielectric Substrates (ANL-IN-14-110)
A second gas at a second flow rate and a third gas at a third flow rate is inserted into the chamber to increase the chamber pressure to a second pressure greater than the first pressure. A chamber temperature is increased to a first temperature. The flow of the second gas and the third gas is stopped. The chamber is purged to a third pressure higher than the first pressure and lower than the second pressure. The pressure of the chamber is set at a fourth pressure greater than the first pressure and the third pressure. A fourth gas is inserted into the chamber at a fourth flow rate for a first time.
Benefits
- Optically transparent, CVD deposition of reduced graphene oxide film directly on the glass substrate
- Wafer-scale synthesis in few mins
- Pin-hole free deposition
- Moderate sheet resistance at lower thickness
- High thermal conductivity than Tin Oxide