Plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material
Technology available for licensing: The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material.
- The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
- The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, and
- Thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features.