With support from the Q-NEXT quantum center, scientists leverage nanoscale-research facilities to conduct pioneering precision studies of qubits in silicon carbide, leading to a better understanding of quantum devices and higher performance.
Scientists demonstrate a new method for stretching the length of time qubits can maintain information — by disrupting the symmetry of their environment.
In a study published in the Nature Partner Journal, Quantum Information, researchers measured properties of chromium ions that could be used as qubits in silicon carbide for quantum computing applications.
In a study published in Nature Communications, researchers develop a comprehensive model of the defects and optical processes involved, offering a strong basis to improve material design and to develop quantum applications in SiC.
