Molecular mechanism of defect annihilation in directed self-assembly of block copolymers on patterned substrates.
Significance and Impact
Directed self-assembly of block copolymers provides a promising route towards the fabrication of devices with characteristic dimensions on the scale of 5 to 20 nm. Understanding the pathways for removal of low-density defects will enable deployment of DSA based technologies for applications ranging from microelectronics to quantum information sciences.
- Detailed molecular models of block copolymer directed self-assembly permit calculation of the probability of forming rare defects.
- Advanced sampling techniques enables calculation of the minimum-free-energy pathway (including free energy barriers) for annihilation of such defects under experimentally relevant conditions.
- High-precision experimental measurements of defect density and defect annealing confirm the predictions of simulations.
Work was performed at Argonne National Laboratory.
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