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Alan M Dibos

Q-Next Materials Scientist

Biography

Education

PhD, Applied Physics, Harvard Univ. (2015)

BS, Physics, Univ. of Kansas, (2006)

Professional Experience

Assistant Scientist, Q-NEXT, Argonne: 2024 - Present

Assistant Scientist, Center for Molecular Engineering, Argonne: 2019 – Present

Assistant Scientist, Center for Nanoscale Materials, Argonne: 2019 – 2024

Postdoctoral Scholar, Electrical Engineering, Princeton: 2016 – 2019

Postdoctoral Scholar, Chemistry, Harvard: 2015 – 2016

Research Assistant, Applied Physics, Harvard: 2006 –2015

Research Areas

Dr. Dibos is a Materials Scientist within Argonne’s Q-NEXT National Quantum Information Science Research Center. He is an expert in nanofabrication and cryogenic measurement of low-dimensional optical nanostructures. His research involves optical coupling of photonic and plasmonic nanocavities to atom-like defect centers in solid-state hosts. The goal is to modify the spectral properties, increase photon emission rates, and improve the photon collection efficiency for quantum information science applications.

In this vein, Dr. Dibos works as a principal investigator (PI) on a Q-NEXT project investigating telecom quantum optical memories based upon solid-state spins at low temperatures with photons collected directly into optical fiber. He also works within Q-NEXT’s Argonne Quantum Foundry on increased scaling and throughput of diamond membranes using novel semiconductor transfer processes. Dr. Dibos is also a co-PI on the ASCR-funded InterQnet project involving quantum networking between heterogeneous qubit platforms. Previously, he served as lead-PI on a LDRD project involving incorporation of qubits with on-chip superconducting nanowire single photon detectors (SNSPDs) to increase device functionality.

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