Microelectronics Seminar
Abstract: Power electronics play an increasingly important role in the push for electrification. Materials and devices that can handle large power loads with low loss, operate in extreme environments (including high temperatures) and are chemically and radiation-hard are required for a resilient grid. Wide-bandgap and ultrawide-bandgap materials, such as AlGaN, fill that role. However, there is a lack of suitable substrates for epitaxial growth.
In this talk I will highlight some preliminary results characterizing ScB2, a refractory metallic diboride, which is a promising new substrate material. ScB2 is lattice-matched to Al0.5Ga0.5N (50% Al content) and offering a platform for engineering the band structure and thermal transport characteristics of a key III-V power-electronics material. We employed X-ray absorption spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction to probe and correlate measurements of electronic and atomic structure. In this talk, we will present initial results on crystalline quality, structural and electronic properties, and progress toward heterogeneous integration with AlxGa1-xN films.
The Argonne Microelectronics Institute brown bag seminar series is an informal discussion that enables information sharing and collaboration around microelectronics efforts. Join us in-person or online to learn more about microelectronics research across Argonne.
If you have questions about the brown bag meeting series or have suggestions for future speakers, contact Swann Perarnau (swann@anl.gov).