Nanobeam X-ray Diffraction for Wide Bandgap Materials/Devices

Abstract: Nanobeam X-ray diffraction using synchrotron radiation is attracting much attention as a nanoscale strain probe for semiconductor materials/devices. 

In this seminar, Yusuke Hayashi gives a talk on the application of nanobeam X-ray diffraction to the wide bandgap material gallium nitride (Gan). The nanoscale strain field is visualized by measuring the three-dimensional reciprocal space mapping around single threading dislocations in bulk Gan substrates and Gan vertical power devices.