Argonne maintains a wide-ranging science and technology portfolio that seeks to address complex challenges in interdisciplinary and innovative ways. Below is a list of all articles, highlights, profiles, projects, and organizations related specifically to nanoscience and nanotechnology.
In a recent study published in ACS Nano, researchers advanced the current understanding of defect structure/evolution and structural transitions in 2D TMDs, which is crucial for designing nanoscale devices with desired functionality.
In a study published in Nanoscale, researchers show that the variability seen in devices that operate by filament formation and dissolution is linked to differences in device starting local microstructure.
In a study published in Nano Letters, researchers found that stress induced by metal electrodes directly impacts the ability to control positions of potential minima where quantum dots form and the coupling between neighboring quantum dots.
In a recent study published in Nature Communications, researchers at the Center for Nanoscale Materials shed light on the design of materials that exhibit highly anisotropic thermal dissipation properties.
In a study published in Nanoscale, Argonne researchers demonstrate, using a combination of microscopies, the mechanisms by which bacteria are killed, emphasizing the dependence upon pillar density and tip geometry.
In a recent study published in Nanoscale, researchers show that an irreversible transition between strongly non-collinear and single domain states translate into a nonlinear magnetic response that enables ultrasensitive detection.
In a recent study published by Applied Physics Letters, researchers at the Center for Nanoscale Materials developed a method to directly investigate regions of interfacial magnetism and to detect and measure the local magnetism and chemistry.
In a recent study published by Proceedings of the National Academy of Sciences USA, Center for Nanoscale Materials researchers demonstrated perovskite nickelates as Li-ion shuttles with simultaneous suppression of electronic transport via Mott transition.