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Intellectual Property

Below is a comprehensive list of articles, events, projects, references and research related content that is specific to the term described above. Use the filter to narrow the results further. To explore additional science and technology topics that Argonne researchers and engineers may be working on please visit our Research Index.

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  • This invention is a method of plastic waste upcycling using multi-metallic nanoparticles as catalysts.
    Intellectual Property Available to License

    ANL researchers have performed high-throughput screening to identify multi-metallic combinations that can function effectively as nanoparticle catalysts for plastic waste upcycling processes.

  • The inventions offer the potential of high-power lasers to deliver enhanced performance in precise drilling, sawing, cutting, or otherwise shaping, such as carving or sculpting, of rocks and composite structures of steel casing, cement and rocks.
    Intellectual Property Available to License
    US Patent 7,487,834
    • Methods of using a laser to perforate composite structures of steel casing, cement and rocks
    US patent 7,416,258
    • Methods of using a laser to spall and drill holes in rocks

    Apparatus and methods of using lasers are provided for spalling and drilling holes into rocks. A rock removal process is provided that utilizes a combination of laser-induced thermal stress and laser induced superheated steam explosions just below the surface of the laser/rock interaction to spall the rock into small fragments that can then be easily removed by a purging flow. Single laser beams of given irradiance spall rock and create holes having diameter and depth approximately equal to the beam spot size. A group of the single laser beams are steered in a controllable manner by an electro-optic laser beam switch to locations on the surface of the rock, creating multiple overlapping spalled holes thereby removing a layer of rock of a desired diameter. Drilling of a deep hole is achieved by spalling consecutive layers with an intermittent feed motion of the laser head perpendicular to the rock surface.

  • Argonne has developed a suite of technologies to enable sodium-ion batteries, including both anode and cathode materials.
    Intellectual Property Available to License
    Argonne’s sodium-ion cathode technologies:
    Electrode materials for sodium batteries
    • ANL-IN-10-056 - Electrode materials for sodium batteries
    Sodium chalcogenide electrodes for sodium batteries
    • ANL-IN-12-082 - Sodium chalcogenide electrodes for sodium batteries
    Hollow nanoparticle cathode materials for sodium electrochemical cells and batteries
    • ANL-IN-13-024 - Hollow nanoparticle cathode materials for sodium electrochemical cells and batteries
    High performance layered cathode materials for high voltage sodium-ion batteries
    • ANL-IN-16-069 - High performance layered cathode materials for high voltage sodium-ion batteries
    Argonne’s sodium-ion anode technologies:
    Lead-lead oxide-carbon nanocomposite for energy storage cells and method of preparation
    • ANL-IN-19-101 - Lead-lead oxide-carbon nanocomposite for energy storage cells and method of preparation
    Composite anodes for sodium-ion batteries
    • ANL-IN-19-160 - Composite anodes for sodium-ion batteries

    Technology Overview & Benefits

    Sodium-ion batteries are an emerging commercial alternative to lithium-ion batteries for stationary storage and transportation applications due to the greater abundance and lower cost of sodium as well as their performance advantages at low temperatures.

    Applications and Industries

    Electrodes for use in Sodium-ion batteries for:

    • Stationary energy storage systems
    • Electric and plug-in hybrid electric vehicles
  • This invention is a fundamentally new solid-state single-electron qubit platform based upon trapping and gating isolated single electrons on an ultra clean solid neon surface in vacuum.
    Intellectual Property Available to License
    US Patent Pending
    • Noble Gas Solid-State Single Electron Qubit Platform

    Qubits are the basic units of quantum computers, analogous to transistors in classical computing platforms. There are a limited number of demonstrated qubit platforms, and each has challenges with coherence (ability to maintain quantum entanglement), speed, fidelity, and/or scalability (ability to fabricate and couple multiple units). However, this invention is a new type of qubit platform that could resolve the coherence challenge, which will potentially open up new unprecedented opportunities for quantum computing.

  • Argonne researchers have invented functional bilayer thin film coatings based on the atomic layer deposition methods to enhance the particle detection efficiency and performance of the projection chambers.
    US Patent 11414756B2
    • Particle detection structure in time projection chambers and photodetectors (ANL-IN-18-114)

    Time projection chambers are useful for high energy particle physics, nuclear physics, and astronomy. Argonne’s novel functional bilayer thin film coatings enhance particle detection efficiency and projection chamber performance.

  • Argonne researchers have invented an enhanced electron amplifier structure.
    Intellectual Property Available to License
    US Patent 10180508B1
    • Enhanced neutron detector and electron amplifier (ANL-IN-16-041)

    Argonne’s enhanced electron amplifier structure includes a substrate that amplifies incident particle signal and a novel layer that enhances substrate sensitivity to the incident particle.

  • Argonne researchers have invented a novel method of depositing fluoride thin films.
    Intellectual Property Available to License
    US Patent 11111578B1
    • Atomic layer deposition of fluoride thin films (ANL-IN-19-039)

    Alkaline earth metal fluorides have various optical applications due to their fascinating property of exhibiting high transparency, ranging from wavelengths in vacuum ultraviolet to the long infrared spectrum. Argonne’s novel method for depositing fluoride thin films uses very low temperatures and results in epitaxial growth.

  • Enhanced electron amplifier structure (ANL-IN-15-123)
    Intellectual Property Available to License
    US Patent 10867768B2
    • Enhanced electron amplifier structure (ANL-IN-15-123)

    An electron amplifier structure or an electron multiplier may be used as a component in a detector system to detect low levels of electrons, ions, or photons. Argonne’s novel method leads to enhanced electronic signal detection sensitivity.

  • Argonne researchers have invented a method for improving tungsten thin film adhesion in Atomic Layer Deposition (ALD).
    Intellectual Property Available to License
    US patent 20180094352A1
    • Methods to Improve the Tungsten Thin Film Adhesion (ANL-IN-16-031)

    At present, semiconductor microelectronic logic and memory devices use tungsten thin films as integrated device wirings and contact metallization. Argonne’s novel method improves metal layer adhesion and nucleation, enhancing the metal grain growth and increasing electrical conductivity.

  • Argonne researchers have invented scalable electron amplifier devices and atomic layer deposition (“ALD”) fabrication process methods.
    Intellectual Property Available to License
    US Patents 10062555B2 & 10121642B2
    • Digital electron amplifier with anode readout (DEAAR) device (ANL-IN-14-055 and ANL-IN-14-055B)

    Argonne’s ALD fabrication process allows for large area (e.g., eight inches by eight inches) electron amplifier devices to be produced at reduced costs compared to current fabrication processes. The Argonne ALD fabrication process allows for nanostructure functional coatings to impart a desired electrical conductivity and electron emissivity onto low cost borosilicate glass micro-capillary arrays to form the electron amplifier devices.