Argonne has developed a comprehensive technology portfolio for Sequential Infiltration Synthesis (SIS) technology, which includes creation of ordered nanoscale domains by infiltration of block copolymers, use of SIS for advanced lithography and for enhancing multi-pattern lithography, and the application of SIS for creation of advanced sorbents.
Benefits: SIS is a versatile platform for the precise growth of inorganic materials within polymer templates. The polymer can subsequently be removed using standard techniques or retained to maintain desirable properties of the initial template. This foundational technique has a wide range of industrial uses including:
- Robust methods for photolithography, electron-beam lithography, and block copolymer lithography patterning, including high-aspect-ratio lithography.
- Synthesis of high-performance dielectrics.
- Efficient fabrication of nanostructured surfaces for use in anti-reflective or anti-fouling/self-cleaning coatings.
- Creation of advanced sorbents through infiltration of polymer foams.
Figure 1: Dense (<20nm) lines etched into a Si structure using SIS demonstrate its potential for high aspect-ratio (greater than 6:1) semiconductor lithography.
Figure 2: SIS technology has been applied to create advanced sorbents for oil recovery, starting from polymer foams.