Record-Low Contact Resistance in Diamond Electronics
Scientific Achievement
Researchers demonstrated ohmic contacts with record-low specific contact resistivity using a Ti/Pt/Au metal stack on n-UNCD films. The superior performance is attributed to the formation of titanium carbide layer and negligible intermetallic diffusion at temperatures as high as 800℃.
Significance and Impact
This approach enables more efficient, thermally stable diamond-based electronics for high-power, high-frequency, and radiation-resilient applications that also demand efficient heat management.
Research Details
- All work was carried out at the CNM including n-UNCD film growth, device fabrication, electrical characterization, and analysis.
DOI: 10.1063/5.0286190
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