A silicon CMOS-compatible resistive switching memory applicable to 3D crossbar architectures was created.
Significance and Impact
By developing criteria to select electrode metals for cationic filamentary resistive memory devices and demonstrating stable memory device performance under high thermal stress, the potential this structure holds for high density memory cells was confirmed.
- Device characterization included time evolution study of filament formation, revealing microstructural effects on device performance.
- This work used fabrication, materials characterization, and computational resources at the Center for Nanoscale Materials (CNM) including clean room facilities and transmission electron microscopy (TEM).
Work was performed in part at the Center for Nanoscale Materials.
About Argonne’s Center for Nanoscale Materials
The Center for Nanoscale Materials is one of the five DOE Nanoscale Science Research Centers, premier national user facilities for interdisciplinary research at the nanoscale supported by the DOE Office of Science. Together the NSRCs comprise a suite of complementary facilities that provide researchers with state-of-the-art capabilities to fabricate, process, characterize and model nanoscale materials, and constitute the largest infrastructure investment of the National Nanotechnology Initiative. The NSRCs are located at DOE’s Argonne, Brookhaven, Lawrence Berkeley, Oak Ridge, Sandia and Los Alamos National Laboratories. For more information about the DOE NSRCs, please visit https://science.energy.gov/bes/suf/user-facilities/nanoscale-science-research-centers/.
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